A phase field model for dislocation climb

被引:35
|
作者
Geslin, Pierre-Antoine [1 ]
Appolaire, Benoit [1 ]
Finel, Alphonse [1 ]
机构
[1] Onera CNRS, Lab Etud Microstruct, F-92322 Chatillon, France
关键词
BULK DIFFUSION; SIMULATIONS; SUPERALLOYS; DYNAMICS; KINETICS;
D O I
10.1063/1.4860999
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a phase field method to model consistently dislocation climb by vacancy absorption or emission. It automatically incorporates the exact balance between the vacancy flux and the phase field associated with the dislocation evolution, enforced by the conserved character of the total population of vacancies. One of its major advantage is the natural introduction of a dynamic coefficient controlling the kinetics of vacancy emission/absorption by the dislocation. We also derived a closed-form expression of the climb rate valid from the diffusion-limited to the attachment-limited regimes. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
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