The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor

被引:0
|
作者
Zhou Shou-Li [1 ]
Li Jia [1 ]
Ren Hong-Liang [1 ]
Wen Hao [1 ]
Peng Yin-Sheng [1 ]
机构
[1] Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310023, Zhejiang, Peoples R China
关键词
InP/InGaAs HBT; interface charges; built-in potential; thermionic emission and tunneling; PERFORMANCE; GAAS;
D O I
10.7498/aps.62.178501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The carriers transport at the base-emitter interface of abrupt heterojunction bipolar transistors (HBTs) is controlled by thermionic emission and tunneling, which depends on the form and height of the energy barriers. The interface charges at the heterojunction disturb the energy barriers, thus bringing about the change of the electrical characteristics of HBT. Based on thermionic-field-diffusion model which combines the drift-diffusion transport in the bulk of the transistor with the thermionic emission and tunneling at the interface, a conclusion can be drawn that the positive interface charges can improve the electrical characteristics of abrupt InP/InGaAs HBT, while the negative interface charges deteriorate the devices.
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页数:4
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共 16 条
  • [1] Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments
    Chen, Tzu-Pin
    Lee, Chi-Jhung
    Chen, Li-Yang
    Tsai, Tsung-Han
    Liu, Yi-Jhung
    Huang, Chien-Chang
    Chen, Tai-You
    Cheng, Shiou-Ying
    Liu, Wen-Chau
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (04) : 715 - 722
  • [2] [崔海林 Cui Hailin], 2012, [光电子·激光, Journal of Optoelectronics·Laser], V23, P1067
  • [3] Analysis of interface recombination and self-absorption effect on the performance of QWIP-HBT-LED integrated device
    Eladl, Sh. M.
    [J]. MICROELECTRONICS JOURNAL, 2008, 39 (12) : 1649 - 1653
  • [4] Fuente J G, 2002, SOLID STATE ELECT, V46, P1273
  • [5] Gourab D, 2012, J SEMICONDUCTORS, V33
  • [6] A SIMPLE EXPRESSION FOR BAND-GAP NARROWING (BGN) IN HEAVILY DOPED SI, GE, GAAS AND GEXSI1-X STRAINED LAYERS
    JAIN, SC
    ROULSTON, DJ
    [J]. SOLID-STATE ELECTRONICS, 1991, 34 (05) : 453 - 465
  • [7] Kaipa P K, 1998, SOLID STATE ELECT, V42, P1779
  • [8] Surface photovoltage phenomena: theory, experiment, and applications
    Kronik, L
    Shapira, Y
    [J]. SURFACE SCIENCE REPORTS, 1999, 37 (1-5) : 1 - 206
  • [9] Extrinsic Base Surface Passivation in High Speed "Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure
    Liu Hong-Gang
    Jin Zhi
    Su Yong-Bo
    Wang Xian-Tai
    Chang Hu-Dong
    Zhou Lei
    Liu Xin-Yu
    Wu De-Xin
    [J]. CHINESE PHYSICS LETTERS, 2010, 27 (05)
  • [10] Tribological properties of a-C:W film deposited by radio frequency magnetron Co-sputtering method
    Park, Yong Seob
    Park, Young
    Jung, Hosung
    Jung, Tae-Hwan
    Lim, Dong-Gun
    Choi, Won Seok
    [J]. THIN SOLID FILMS, 2012, 521 : 107 - 111