Compact physical models for multiwall carbon-nanotube interconnects

被引：258
作者：
Naeemi, Azad [1 ]
Meindl, James D. [1 ]
机构：
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期
关键词：
conductivity; interconnections; modeling; molecular electronics; quantum wires;
D O I：
10.1109/LED.2006.873765
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Compact physical models are derived for conductivity of multiwall carbon-nanotube (MWCN) interconnects. It is proven that for MWCNs shorter than the critical length (typically around 7 mu m), the conductivity decreases as diameter increases, whereas for MWCNs longer than the critical length, increasing the diameter results in higher conductivities. For long lengths (hundreds of micrometers), MWCNs can potentially have conductivities several times larger than that of copper or even single-wall carbon nanotube (SWCN) bundles. For short lengths (< 10 mu m), however, SWCN bundles offer more than two times higher conductivities compared to MWCNs.
引用
收藏
页码：338 / 340
页数：3
相关论文
共 14 条
[1]  
Datta S., 2013, QUANTUM TRANSPORT AT, DOI DOI 10.1017/CBO9781139164313
[2]  
FORRO L, 2000, TOPICS APPL PHYS CAR
[3]   Universal expression for localization length in metallic carbon nanotubes [J].
Jiang, J ;
Dong, JM ;
Yang, HT ;
Xing, DY .
PHYSICAL REVIEW B, 2001, 64 (04)
[4]   Multichannel ballistic transport in multiwall carbon nanotubes [J].
Li, HJ ;
Lu, WG ;
Li, JJ ;
Bai, XD ;
Gu, CZ .
PHYSICAL REVIEW LETTERS, 2005, 95 (08)
[5]   Bottom-up approach for carbon nanotube interconnects [J].
Li, J ;
Ye, Q ;
Cassell, A ;
Ng, HT ;
Stevens, R ;
Han, J ;
Meyyappan, M .
APPLIED PHYSICS LETTERS, 2003, 82 (15) :2491-2493
[6]   Electronic structure of carbon nanotube ropes [J].
Maarouf, AA ;
Kane, CL ;
Mele, EJ .
PHYSICAL REVIEW B, 2000, 61 (16) :11156-11165
[7]   Single-walled carbon nanotube electronics [J].
McEuen, PL ;
Fuhrer, MS ;
Park, HK .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) :78-85
[8]   Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI) [J].
Naeemi, A ;
Sarvari, R ;
Meindl, JD .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (02) :84-86
[9]   Impact of electron-phonon scattering on the performance of carbon nanotube interconnects for GSI [J].
Naeemi, A ;
Meindl, JD .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :476-478
[10]   Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells [J].
Nihei, M ;
Kondo, D ;
Kawabata, A ;
Sato, S ;
Shioya, H ;
Sakaue, M ;
Iwai, T ;
Ohfuti, M ;
Awano, Y .
PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2005, :234-236
12