Molecular dynamics simulations of the sticking and etch behavior of various growth species of (ultra)nanocrystalline diamond films

被引:28
作者
Eckert, Maxie [1 ]
Neyts, Erik [1 ]
Bogaerts, Annemie [1 ]
机构
[1] Univ Antwerp, Res Grp PLASMANT, Dept Chem, B-2610 Antwerp, Belgium
关键词
molecular dynamics simulations; nanocrystalline diamond; sticking and etch coefficient; ultrananocrystalline diamond;
D O I
10.1002/cvde.200706657
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The reaction behavior of species that may affect the growth of ultrananocrystal line and nanocrystalline diamond ((U)NCD) films is investigated by means of molecular dynamics simulations. Impacts of CHx (x = 0 - 4), C2Hx (x=0-6), C3Hx (x=0-2), C4Hx (x = 0 - 2), H, and H-2 on clean and hydrogenated diamond (100)2 x 1 and (111) 1 x 1 surfaces at two different substrate temperatures are simulated. We find that the different bonding structures of the two surfaces cause different temperature effects on the sticking efficiency. These results predict a temperature-dependent ratio of diamond (100) and (111) growth. Furthermore, predictions of which are the most important hydrocarbon species for (U)NCD growth are made.
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页码:213 / 223
页数:11
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