Simultaneous blocking of minority carrier and high energy phonon in p-type skutterudites

被引:21
作者
Ren, Wei [1 ]
Geng, Huiyuan [1 ]
Zhang, Lixia [1 ]
Liu, Xianpeng [1 ]
He, Tianhong [1 ]
Feng, Jicai [1 ]
机构
[1] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Heilongjiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Filled skutterudites; Selective scattering; Bipolar effect; Cation fluctuation; HIGH THERMOELECTRIC PERFORMANCE; FILLED SKUTTERUDITES; ENHANCEMENT; TRANSPORT; FIGURE; BANDS; MERIT; CONVERGENCE; EFFICIENCY;
D O I
10.1016/j.nanoen.2018.02.009
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Skutterudites are among the most promising thermoelectric materials. However, the strong bipolar effects and a lack of high energy phonon scattering make the thermoelectric performance of p-type skutterudites far below that of n-type skutterudites. Here, we reveal that the distribution of cations spatially fluctuate in p-type skutterudites, leading to a band edge fluctuation with small valence-band offsets, multi-scale strain field fluctuation, and formation of nanostructures. It further results in a significant suppressed bipolar effect, and wide-frequency spectrum phonon scattering. A 38% enhanced power factor and reduced lattice thermal conductivity approaching to the theoretical minimum at 723 K lead to a remarkable theoretical conversion efficiency of 13.3%, reaching the highest records in p-type lead-free thermoelectric materials. Our results provide a new thought to realize high performance in polynary thermoelectric materials.
引用
收藏
页码:249 / 256
页数:8
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