Dielectric relaxation in A2FeNbO6 (A = Ba, Sr, and Ca) perovskite ceramics

被引：69

作者：

Ke, Shanming ^{[1
,2
,3
]}

Fan, Huiqing ^{[1
]}

Huang, Haitao ^{[2
,3
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[3] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF ELECTROCERAMICS | 2009年 / 22卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

AFN; Dielectric relaxation; Polaronic relaxation; TEMPERATURE-RANGE;

D O I：

10.1007/s10832-007-9353-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A(2)FeNbO(6) (A = Ba, Sr, and Ca, abbreviated as AFN) ceramics were synthesized by a wolframite method with monoclinic FeNbO4 precursor. X-ray diffraction studies revealed that Sr2FeNbO6 and Ca2FeNbO6 had a orthorhombic structure, while Ba2FeNbO6 had a cubic symmetry. Dielectric properties of the AFN ceramics were characterized in a broad frequency range (1 Hz-10 MHz) at a temperature ranged from -120 to 300 A degrees C. Two dielectric relaxations were observed to follow the Arrhenius law at both low and high temperatures for all samples. Polaron relaxation was proposed to explain the low temperature dielectric relaxations in AFN. The high temperature dielectric relaxations in AFN were a competitive phenomenon between the dielectric relaxation and the electrical conduction of the relaxing species.

引用

页码：252 / 256

页数：5

共 19 条

[1] SPACE-CHARGE RELAXATION IN PEROVSKITES [J].