Two-dimensional Blue-AsP monolayers with tunable direct band gap and ultrahigh carrier mobility show promising high-performance photovoltaic properties

被引:85
作者
Cai, Xinyong [1 ]
Chen, Yuanzheng [1 ]
Sun, Bai [1 ,2 ,3 ]
Chen, Jiao [1 ]
Wang, Hongyan [1 ]
Ni, Yuxiang [1 ]
Tao, Li [4 ]
Wang, Hui [1 ,5 ]
Zhu, Shouhui [1 ]
Li, Xiumei [1 ]
Wang, Yanchao [5 ]
Lv, Jian [5 ]
Feng, Xiaolei [6 ]
Redfern, Simon A. T. [6 ]
Chen, Zhongfang [7 ]
机构
[1] Southwest Jiaotong Univ, Key Lab Adv Technol Mat, Sch Phys Sci & Technol, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China
[2] Univ Waterloo, Waterloo Inst Nanotechnol, Dept Mech & Mechatron Engn, Ctr Adv Mat Joining, Waterloo, ON N2L 3G1, Canada
[3] Univ Waterloo, Dept Phys & Astron, Waterloo, ON N2L 3G1, Canada
[4] Chengdu Univ Informat Technol, Sch Optoelect Technol, Chengdu 610225, Sichuan, Peoples R China
[5] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
[6] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
[7] Univ Puerto Rico, Dept Chem, Rio Piedras Campus, San Juan, PR 00931 USA
基金
中国国家自然科学基金; 英国自然环境研究理事会;
关键词
ELECTRONIC-STRUCTURE; BLACK PHOSPHORUS; CRYSTAL-STRUCTURE; PHASE; SEMICONDUCTORS; TRANSITION; PREDICTION; ARSENENE; GROWTH;
D O I
10.1039/c9nr01261c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The successful fabrication of black phosphorene (Black-P) in 2014 and subsequent synthesis of layered black As1-xPx alloys have inspired research into two-dimensional (2D) binary As-P compounds. The very recent success in growing blue phosphorene (Blue-P) further motivated exploration of 2D Blue-AsP materials. Here, using ab initio swarm-intelligence global minimum structure-searching methods, we have obtained a series of novel and energetically favored 2D Blue-AsP (denoted x-AsP, x = I, II, III, IV, V) compounds with As:P = 1:1 stoichiometry. They display similar honeycomb structures to Blue-P. Remarkably, the lowest-energy AsP monolayer, namely I-AsP, not only possesses a quasi-direct band gap (2.41 eV), which can be tuned to a direct and optimal gap for photovoltaic applications by in-plane strain, but also has an ultrahigh electronic mobility up to approximate to 7.4 x 10(4) cm(2) V-1 s(-1), far surpassing that of Blue-P, and also exhibits high absorption coefficients (x10(5) cm(-1)). Our simulations also show that 30 nm-thick I-AsP sheet-based cells have photovoltaic efficiency as high as approximate to 12%, and the I-AsP/CdSe heterostructure solar cells possess a power conversion efficiency as high as approximate to 13%. All these outstanding characteristics suggest the I-AsP sheet as a promising material for high-efficiency solar cells.
引用
收藏
页码:8260 / 8269
页数:10
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