Growth, processing, and optical properties of epitaxial Er2O3 on silicon

被引：57

作者：

Michael, C. P. ^{[1
]}

Yuen, H. B. ^{[2
]}

Sabnis, V. A. ^{[2
]}

Johnson, T. J. ^{[1
]}

Sewell, R. ^{[2
]}

Smith, R. ^{[2
]}

Jamora, A. ^{[2
]}

Clark, A. ^{[2
]}

Semans, S. ^{[2
]}

Atanackovic, P. B. ^{[2
]}

Painter, O. ^{[1
]}

机构：

[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA

[2] Translucent Inc, Palo Alto, CA 94303 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 24期

关键词：

D O I：

10.1364/OE.16.019649

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er3+ density 100 x greater. We report the growth, processing, material characterization, and optical properties of single-crystal Er2O3 epitaxially grown on silicon. A peak Er3+ resonant absorption of 364 dB/cm at 1535 nm with minimal background loss places a high limit on potential gain. Using high-quality microdisk resonators, we conduct thorough C/L-band radiative efficiency and lifetime measurements and observe strong upconverted luminescence near 550 and 670 nm. (C) 2008 Optical Society of America

引用

页码：19649 / 19666

页数：18

共 66 条

[1] A REVIEW OF THE FABRICATION AND PROPERTIES OF ERBIUM-DOPED FIBERS FOR OPTICAL AMPLIFIERS [J].