Non-Polar Wurtzite (11(2)over-bar0) GaN/AlN Quantum Dots for Highly Efficient Opto-Electronic Devices

被引：3

作者：

Park, Seoung-Hwan ^{[1
]}

Ahn, Doyeol ^{[2
,3
]}

机构：

[1] Catholic Univ Daegu, Dept Elect Engn, Kyeongsan 38430, Gyeongbuk, South Korea

[2] Univ Seoul, Dept Elect & Comp Engn, Seoulsiripdae Ro 163, Seoul 02504, South Korea

[3] Florida Atlantic Univ, Charles E Schmidt Coll Sci, Dept Phys, Boca Raton, FL 33431 USA

来源：

ELECTRONICS | 2020年 / 9卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

GaN; AlN; quantum dot; non-polar; light emission; ELECTRONIC-PROPERTIES; OPTICAL-PROPERTIES; ORIENTATION; FIELDS;

D O I：

10.3390/electronics9081256

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In III-nitride quantum dots (QDs), optical transition rate is very low because of the large built-in electrostatic field caused by the spontaneous polarization (SP) and piezoelectric (PZ) effects. In this work, we study the screening potential which is a solution of the self-consistent Hartree equation taking into account the built-in electrostatic field and its effect on light emission characteristics of non-polar wurtzite (WZ) (11 (2) over bar0) GaN/AlN QD. It is found that the light emission intensity of the non-polar (11 (2) over bar0) GaN/AlN QD structure is expected to be about four times larger than that of the c-plane (0001) GaN/AlN QD structure because the y-polarized matrix elements in the non-polar QD are larger than that in the c-plane QD. These predictions indicate that non-polar GaN/AlN QD structure have strong potential for highly efficient opto-electronic devices.

引用

页码：1 / 10

页数：10

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