N-Type Doping of Fullerenes for Planar Perovskite Solar Cells

被引:73
作者
Ye, Qing-Qing [1 ]
Wang, Zhao-Kui [1 ]
Li, Meng [1 ]
Zhang, Cong-Cong [1 ]
Hu, Ke-Hao [1 ]
Liao, Liang-Sheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
国家重点研发计划;
关键词
HIGHLY EFFICIENT; INTERMEDIATE CONNECTOR; TRANSPORTING LAYER; CHARGE GENERATION; CRYSTALLIZATION; GRAPHENE; DEVICES; DOPANT; IODIDE; PCBM;
D O I
10.1021/acsenergylett.8b00217
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Modification of TiO2 by using fullerenes is an efficient strategy to further improve the device efficiency and enhance the cell stability of perovskite solar cells (PSCs). However, the intrinsic issues of low electron mobility and electrical conductivity of fullerene materials may restrict their potential application in PSCs. Here, we demonstrated an n-doped electron-transporting layer by doping bis (1-[3-(methoxycarbonyl)propy1]-1-phenyl)-[6,6]C62 (bis-PCBM) with decamethylcobaltocene (DMC) to fabricate n-i-p structure PSCs. We successfully realized an n-type doping of bis-PCBM via a solution-processed doping process. DMC doping played a series of roles in adjusting the energy levels, improving the electron mobility and enhancing the film conductivity of bis-PCBM. A bis-PCBM:DMC composite film could act as an underlay for the deposition and growth of a subsequent perovskite layer owing to its smooth morphology. In addition, the bis-PCBM:DMC composite film also presented good solvent resistance, which could slow down the degradation process of the perovskite layer. Consequently, a champion device with a maximum PCE of 20.14% was approached.
引用
收藏
页码:875 / 882
页数:15
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