Deposition of Ta2O5/SiO2 multilayer films by a new process ''injection MOCVD''

被引：22
|
作者：
Felten, F
Senateur, JP
Labeau, M
YuZhang, K
Abrutis, A
机构：
[1] UNIV MARNE VALLEE,LAB RECONNAISSANCE MAT ENVIRONM,F-93166 NOISY LE GRAND,FRANCE
[2] VILNIUS STATE UNIV,DEPT GEN & INORGAN CHEM,LT-2724 VILNIUS,LITHUANIA
来源：
THIN SOLID FILMS | 1997年 / 296卷 / 1-2期
关键词：
injection MOCVD; multilayers; silicon dioxide; tantalum pentoxide;
D O I：
10.1016/S0040-6090(96)09351-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ta2O5 and SiO2 multilayer stacks have been deposited on silicon (100) substrate at 850 degrees C and 550 degrees C by a new process, which consists of injecting small and accurate quantities of precursor into an LPCVD reactor. Injections of the metalorganic precursors of tantalum and silicon have been achieved with two high speed electro-valves. AFM and TEM characterizations show that Ta2O5 thin film deposited at 850 degrees C has a very rough surface, whereas at 600 degrees C ii presents a smooth surface. From the TEM images of the multilayers, a similar behavior is observed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：79 / 81
页数：3
相关论文
共 50 条
  • [1] Antireflecting coating from Ta2O5 and SiO2 multilayer films
    Koc, K
    Tepehan, FZ
    Tepehan, GG
    JOURNAL OF MATERIALS SCIENCE, 2005, 40 (06) : 1363 - 1366
  • [2] Antireflecting coating from Ta2O5 and SiO2 multilayer films
    K. Koc
    F. Z. Tepehan
    G. G. Tepehan
    Journal of Materials Science, 2005, 40 : 1363 - 1366
  • [3] Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5
    Devine, RAB
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1924 - 1926
  • [4] Laser Induced Damage Threshold of Ta2O5 and Ta2O5/SiO2 Films at 532 and 1064 nm
    Kumar, Sunil
    Shankar, Ajay
    Kishore, Nawal
    Mukherjee, C.
    Kamparath, Rajiv
    Thakur, Sudhakar
    OPTIK, 2019, 176 : 438 - 447
  • [5] THE OPTICAL-PROPERTIES OF TA2O5 FILMS AND TA2O5/SIO2/AL2O3 MULTILAYER SYSTEMS PRODUCED BY RF REACTIVE SPUTTERING
    ZEMLICKA, J
    JASTRABIK, L
    ZELEZNY, V
    BOHAC, P
    MALINOVSKY, L
    PLASMA SURFACE ENGINEERING, VOLS 1 AND 2, 1989, : 1261 - 1266
  • [6] Reactive HiPIMS deposition of SiO2/Ta2O5 optical interference filters
    Hala, Matej
    Vernhes, Richard
    Zabeida, Oleg
    Klemberg-Sapieha, Jolanta-Ewa
    Martinu, Ludvik
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (21)
  • [7] Deposition of SiO2 and Ta2O5 films by electron-beam-excited plasma ion plating
    Toki, K
    Kusakabe, K
    Odani, T
    Kobuna, S
    Shimizu, Y
    THIN SOLID FILMS, 1996, 281 : 401 - 403
  • [8] Deposition of SiO2 and Ta2O5 films by electron-beam-excited plasma ion plating
    Toki, Kazuyuki
    Kusakabe, Kazutoshi
    Odani, Tadayoshi
    Kobuna, Sadatoshi
    Shimizu, Yasushi
    Thin Solid Films, 1996, 281-282 (1-2): : 401 - 403
  • [9] INFLUENCE OF SIO2 AT THE TA2O5/SI INTERFACE ON DIELECTRIC CHARACTERISTICS OF TA2O5 CAPACITORS
    NISHIOKA, Y
    SHINRIKI, H
    MUKAI, K
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2335 - 2338
  • [10] Self-consistent optical constants of SiO2 and Ta2O5 films
    Rodriguez-de Marcos, Luis V.
    Larruquert, Juan I.
    Mendez, Jose A.
    Aznarez, Jose A.
    OPTICAL MATERIALS EXPRESS, 2016, 6 (11): : 3622 - 3637
12345