Electron Transport at the Interface Between a Ferromagnetic Insulator and a Topological Insulator

被引：2
|
作者：
Ma, M. J. [1 ]
Jalil, M. B. A. [1 ,2 ]
Tan, S. G. [3 ]
Siu, Z. B. [3 ]
机构：
[1] Natl Univ Singapore, Elect & Comp Engn Dept, Computat Nanoelect & Nanodevice Lab, Singapore 117576, Singapore
[2] Natl Univ Singapore, Elect & Comp Engn Dept, Informat Storage Mat Lab, Singapore 117576, Singapore
[3] Natl Univ Singapore, Data Storage Inst, Singapore 117608, Singapore
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2012年 / 48卷 / 11期
关键词：
Ferromagnetic insulator; spin conductance; topological insulator; SPIN CURRENT;
D O I：
10.1109/TMAG.2012.2196686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We perform a theoretical study of the electron transport through a normal metal-topological insulator-normal metal (NM-TI-NM) system, where a ferromagnetic insulator (FI) layer is deposited on top of the TI. The spin conductance of the system is analyzed as a function of parameters such as the strength of exchange coupling between the surface states of the TI and the magnetic moments of the FI layer, as well as the dimension of the TI channel. We find that the strength of the spin conductance can be optimized by tuning the parameters.
引用
收藏
页码：3398 / 3401
页数：4
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