Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition

被引：38
|
作者：
Wang, Tao [1 ]
Ma, Hong-Ping [1 ]
Yang, Jian-Guo [1 ]
Zhu, Jing-Tao [2 ]
Zhang, Hao [3 ]
Feng, Jijun [4 ]
Ding, Shi-Jin [1 ]
Lu, Hong-Liang [1 ]
Zhang, David Wei [1 ]
机构：
[1] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Tongji Univ, Inst Precis Opt Engn, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
[3] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[4] Univ Shanghai Sci & Technol, Sch Opt Elect & Comp Engn, Shanghai Key Lab Modern Opt Syst, Shanghai 200093, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 744卷
基金：
中国国家自然科学基金;
关键词：
Transparent conducting oxides (TCOs); Atomic layer deposition (ALD); ZnO/Cu/ZnO; Resistivity; Transmittance; DOPED ZNO FILMS; SOLAR-CELLS; TRANSPARENT CONDUCTORS; THIN-FILMS; ITO FILMS; DEPENDENCE; TEMPERATURE; THICKNESS; DEVICES; OXIDE;
D O I：
10.1016/j.jallcom.2018.02.115
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Transparent conducting oxides (TCOs) with ZnO/Cu/ZnO sandwich structure grown by atomic layer deposition (ALD) were investigated. The optical and electrical properties of the ZnO/Cu/ZnO multilayers with different Cu thickness were studied by optical spectrometry and four-point probe measurements, respectively. The structural properties were investigated using x-ray diffraction and high resolution tansmission electron microscopy. The experiment results indicated that the thickness of copper has a significant influence on the photoelectrical properties of films. A average transmittance of over 65% at visual wavelength and low resistivity of similar to 3.05 x 10(-4) Omega.cm were obtained when the thickness of Cu was 14 nm. The obtained results inspire us that ALD method is one of candidates for preparing high quality TCO films with high transmittance and low resistivity. (c) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：381 / 385
页数：5
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