Efficient and reliable field emission from silicon tip arrays for miniaturized electron sources

Silicon-based cathodes with precisely aligned field emitter arrays (FEA) applicable for miniaturized electron sources were successfully developed and fabricated. The cathode chips contain about 3x10(5) Si tips/cm(2) in a triangular array with a tip height of 2.5 mu m, tip radius of 20 nm, and lateral distance between tips of 20 mu m. Amazingly homogeneous and well-aligned field emission (FE) from all tips (i.e. 100% efficiency) and maximum stable currents of typically 0.1 mu A for p-and 0.6 mu A for n-type Si were reproducibly achieved. Current-voltage characteristics of p-type Si tips exhibit the expected saturation at around 10 nA due to limited supply of electrons from a depletion layer, while the n-type Si tips show the usual FN behaviour. Additional coating of the Si tips with a 10 nm Au layer resulted in at least 5 times higher average FE current levels i.e. typically 3 mu A but lead, however, to a 30% increase of the onset voltage.