Diffusion of boron, phosphorus, arsenic, and antimony in thermally grown silicon dioxide

被引：38

作者：

Aoyama, T ^{[1
]}

Tashiro, H ^{[1
]}

Suzuki, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 05期

关键词：

D O I：

10.1149/1.1391859

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We studied the diffusion of dopant impurities, that is, ion-implanted boron, phosphorous, arsenic, and antimony in SiO2 and determined the diffusivity of the impurities in SiO2 using secondary ion mass spectrometry and a process simulator. We also revealed anomalous diffusion of the dopant impurities in SiO2. (C) 1999 The Electrochemical Society. S0013-4651(98)09-005-3. All rights reserved.

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页码：1879 / 1883

页数：5

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