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[61]
2016, OPT EXPRESS, V24, P2047, DOI DOI 10.1364/OE.24.002047
Submicrometer Nanostructure-Based RGB Filters for CMOS Image Sensors
被引：64
作者：
Berzins, Jonas
[1
,2
]
Fasold, Stefan
[1
]
Pertsch, Thomas
[1
,3
]
Baeumer, Stefan M. B.
[2
]
Setzpfandt, Frank
[1
]
机构：
[1] Friedrich Schiller Univ Jena, Inst Appl Phys, Albert Einstein Str 15, D-07745 Jena, Germany
[2] TNO Opt Dept, Stieltjesweg 1, NL-2628 CK Delft, Netherlands
[3] Fraunhofer Inst Appl Opt & Precis Engn, Albert Einstein Str 7, D-07745 Jena, Germany
基金：
欧盟地平线“2020”;
关键词：
submicrometer pixel;
dielectric nanostructures;
color filter;
RGB;
image sensor;
COLOR FILTERS;
SILICON NANOSTRUCTURES;
PRINTING COLOR;
METASURFACES;
RESONATORS;
SCATTERING;
PIXELS;
LIGHT;
D O I：
10.1021/acsphotonics.9b00021
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ;
080502 ;
摘要：
Digital color imaging relies on spectral filters on top of a pixelated sensor, such as a CMOS image sensor. An important parameter of imaging devices is their resolution, which depends on the size of the pixels. For many applications, a high resolution is desirable, consequently requiring small spectral filters. Dielectric nanostructures, due to their resonant behavior and its tunability, offer the possibility to be assembled into flexible and miniature spectral filters, which could potentially replace conventional pigmented and dye-based color filters. In this paper, we demonstrate the generation of transmissive structural colors based on uniform-height amorphous silicon nanostructures. We optimize the structures for the primary RGB colors and report the construction of submicrometer RGB filter arrays for a pixel size down to 0.5 mu m.
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页码：1018 / +
页数：15
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