Characterisation of Pd Schottky barrier on n-type GaN

被引：54

作者：

Ping, AT ^{[1
]}

Schmitz, AC ^{[1
]}

Khan, MA ^{[1
]}

Adesida, I ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 01期

关键词：

Schottky barriers; gallium nitride;

D O I：

10.1049/el:19960029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was similar to 1.04. The effective Richardson constant was determined to be similar to 3.24Acm(-2)K(-2) using the modified Norde plot. These values were also compared to Au Schottky contacts.

引用

页码：68 / 70

页数：3

共 6 条

[1] ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN [J].