Electronic Structure of Nanocrystalline Silicon and Oxidized Silicon Surfaces

Laser picosecond spectroscopy was used for studying the electronic structure of silicon surfaces and films. The method of band-gap determination by estimating the exponential decay time was proposed. The oxidation of silicon surface was important for quantum beats phenomena and connected with defect production in grain boundary of silicon nanocrystallites. Also, the career density decay process in irradiated polycrystalline silicon films was studied by using the pump-probe laser scheme. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1373378] All rights reserved.