Defect dependent ferromagnetism in MgO doped with Ni and Co

被引：35

作者：

Narayan, J. ^{[1
]}

Nori, Sudhakar ^{[1
]}

Pandya, D. K. ^{[2
]}

Avasthi, D. K. ^{[3
]}

Smirnov, A. I. ^{[4
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, NSF Ctr Adv Mat & Smart Struct, Raleigh, NC 27695 USA

[2] Indian Inst Technol, Dept Phys, New Delhi 110016, India

[3] Inter Univ Accelerator Ctr, New Delhi 110067, India

[4] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2977614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated magnetic properties of MgO single crystals doped with Ni and Co impurities, and studied changes in magnetic properties after heavy ion irradiation. These results are compared with doped single-crystal thin films that contain a higher concentration of trapped defects. The as-grown bulk single crystals, which contain a small equilibrium concentration of vacancies, exhibit a perfect paramagnetic behavior throughout the temperature range and magnetic field. By introducing defects either by ion irradiation or by thin film deposition, which have trapped defects, we are able to achieve defect-mediated ferromagnetic ordering. (C) 2008 American Institute of Physics.

引用

页数：3

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