Flash Memory at a Cross-road: Challenges & Opportunities

被引：0
作者：
Quader, Khandker Nazrul [1 ]
机构：
[1] SanDisk Corp, SVP, Memory Technol & Prod Dev, Milpitas, CA USA
来源：
2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年
关键词：
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The flash industry, fuelled by aggressive NAND scaling spanning ten generations, has seen unprecedented growth; a 100x increase in density during the last decade and a 50,000x cumulative cost reduction in 20 years. This has resulted in an explosive growth in mass storage market and a dramatic reduction in cost/MB. Will this continue and influence the emerging SSD market?
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页数：4
相关论文
共 12 条
  • [1] [Anonymous], FLASH MEMORY SUMMIT
  • [2] Cernea R., 2008, ISSCC, P420
  • [3] Chulbum Kim, 2011, 2011 Symposium on VLSI Circuits. Digest of Technical Papers, P196
  • [4] Daeyeal Lee, 2012, 2012 IEEE International Solid-State Circuits Conference (ISSCC), P430, DOI 10.1109/ISSCC.2012.6177077
  • [5] Harari E., 2012, 2012 IEEE International Solid-State Circuits Conference (ISSCC), P10, DOI 10.1109/ISSCC.2012.6176930
  • [6] Air-gap application and simulation results for low capacitance in 60nm NAND Flash memory
    Kim, Sukjoong
    Cho, Wheewon
    Kim, Junggeun
    Lee, Byungseok
    Park, Sungki
    [J]. 2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP, 2007, : 54 - +
  • [7] MAROTTA GG, 2010, ISSCC, P444
  • [8] Peng YL, 2008, IEEE INT C NETW SENS, P543
  • [9] Shibata N., 2012, 2012 IEEE International Solid-State Circuits Conference (ISSCC), P422, DOI 10.1109/ISSCC.2012.6177073
  • [10] Takeuchi K., 2009, IEEE J SOLID STATE C, V44
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