Ultrasonically stimulated low-temperature redistribution of impurities in silicon

被引：7

作者：

Ostrovskii, IV ^{[1
]}

Nadtochii, AB ^{[1
]}

Podolyan, AA ^{[1
]}

机构：

[1] Shevchenko State Univ, Fac Phys, UA-03127 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 04期

关键词：

D O I：

10.1134/1.1469179

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of an ultrasonic treatment on the content of metal impurities in Si surface layers was studied by using secondary-ion mass spectrometry and the photoconductivity relaxation method. It is shown that ultrasound treatment increases the content of K and Na in Si surface layers at room temperature. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：367 / 369

页数：3

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