Spin-to-charge conversion for hot photoexcited electrons in germanium

被引：22

作者：

Zucchetti, C. ^{[1
]}

Bottegoni, F. ^{[1
]}

Isella, G. ^{[1
]}

Finazzi, M. ^{[1
]}

Rortais, F. ^{[2
]}

Vergnaud, C. ^{[2
]}

Widiez, J. ^{[3
]}

Jamet, M. ^{[2
]}

Ciccacci, F. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Fis, LNESS, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

[2] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,INAC Spintec, F-38000 Grenoble, France

[3] Univ Grenoble Alpes, CEA, LETI, DCOS,LIFT, F-38000 Grenoble, France

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 12期

关键词：

SEMICONDUCTOR SPINTRONICS; GENERATION; GAAS;

D O I：

10.1103/PhysRevB.97.125203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the spin-to-charge conversion in highly doped germanium as a function of the kinetic energy of the carriers. Spin-polarized electrons are optically generated in the Ge conduction band, and their kinetic energy is varied by changing the photon energy in the 0.7-2.2 eV range. The spin detection scheme relies on spin-dependent scattering inside Ge, which yields an inverse spin-Hall electromotive force. The detected signal shows a sign inversion for h(v) approximate to 1 eV which can be related to an interplay between the spin relaxation of high-energy electrons photoexcited from the heavy-hole and light-hole bands and that of low-energy electrons promoted from the split-off band. The inferred spin-Hall angle increases by about 3 orders of magnitude within the analyzed photon energy range. Since, for increasing photon energies, the phonon contribution to spin scattering exceeds that of impurities, our result indicates that the spin-to-charge conversion mediated by phonons is much more efficient than the one mediated by impurities.

引用

页数：7

共 54 条

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