EUV lithography performance of negative-tone chemically amplified fullerene resist

被引：3

作者：

Frommhold, A. ^{[1
,3
]}

Yang, D. X. ^{[1
]}

McClelland, A. ^{[2
]}

Xue, X. ^{[4
]}

Palmer, R. E. ^{[1
]}

Robinson, A. P. G. ^{[3
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Irresistable Mat, Birmingham B15 2TT, W Midlands, England

[3] Univ Birmingham, Sch Chem Engn, Birmingham B15 2TT, W Midlands, England

[4] NanoC Inc, Westwood, MA 02090 USA

来源：

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXX | 2013年 / 8682卷

基金：

英国工程与自然科学研究理事会;

关键词：

EUV lithography; molecular resist; fullerene; chemically amplified resist;

D O I：

10.1117/12.2011464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With Extreme Ultraviolet Lithography (EUVL) emerging as one of the top contenders to succeed from optical lithography for the production of next generation semiconductor devices, the search for suitable resists that combine high resolution, low line edge roughness (LER) and commercially viable sensitivity for high volume production is still ongoing. One promising approach to achieve these goals has been the development of molecular resists. We have previously reported on a molecular negative tone resist for e-beam lithography based on fullerene derivatives. Since then we have developed the system further to adapt it to EUVL. Investigation into the lithographic performance of the resist shows resolution down to 20 nm halfpitch with LERs <5 nm and sensitivities similar to 20 mJ/cm(2).

引用

页数：6

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