Investigation of Using SiC MOSFET for High Temperature Applications

被引：6

作者：

Ouaida, Remy ^{[1
]}

Berthou, Maxime ^{[2
]}

Brosselard, Pierre ^{[2
]}

Oge, Sebastien ^{[1
]}

Bevilacqua, Pascal ^{[2
]}

Joubert, Charles ^{[2
]}

机构：

[1] THALES Microelect SAS, F-35370 Cap Bretagne Za Piquet, Etrelles, France

[2] CNRS, UMR 5005, AMPERE Lab, F-69621 Villeurbanne, France

来源：

EPE JOURNAL | 2015年 / 25卷 / 02期

关键词：

Silicon Carbide; Power MOSFET; High Temperature; Characterization; Lifetime; DEPENDENT DIELECTRIC-BREAKDOWN;

D O I：

10.1080/09398368.2015.11835467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25 degrees C to 250 degrees C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300 degrees C.

引用

页码：5 / 11

页数：7

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