Investigation of Using SiC MOSFET for High Temperature Applications

被引：6

作者：

Ouaida, Remy ^{[1
]}

Berthou, Maxime ^{[2
]}

Brosselard, Pierre ^{[2
]}

Oge, Sebastien ^{[1
]}

Bevilacqua, Pascal ^{[2
]}

Joubert, Charles ^{[2
]}

机构：

[1] THALES Microelect SAS, F-35370 Cap Bretagne Za Piquet, Etrelles, France

[2] CNRS, UMR 5005, AMPERE Lab, F-69621 Villeurbanne, France

来源：

EPE JOURNAL | 2015年 / 25卷 / 02期

关键词：

Silicon Carbide; Power MOSFET; High Temperature; Characterization; Lifetime; DEPENDENT DIELECTRIC-BREAKDOWN;

D O I：

10.1080/09398368.2015.11835467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25 degrees C to 250 degrees C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300 degrees C.

引用

页码：5 / 11

页数：7

共 50 条

[21] AlN/SiC MEMS for High-Temperature Applications [J].

Esteves, Giovanni ;

Habermehl, Scott D. ;

Clews, Peggy J. ;

Fritch, Chanju ;

Griffin, Benjamin A. .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2019, 28 (05) :859-864

[22] SiC Die Attach for High-Temperature Applications [J].

Drevin-Bazin, A. ;

Lacroix, F. ;

Barbot, J. -F. .

JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (03) :695-701

[23] Comparative Study on High-Temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-Integrated MOSFET [J].

Gu, Zhaoyuan ;

Yang, Mingchao ;

Yang, Yi ;

Liu, Xihao ;

Gao, Mingyang ;

Qi, Jinwei ;

Liu, Weihua ;

Han, Chuanyu ;

Geng, Li ;

Hao, Yue .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (04) :4187-4201

[24] An Accurate Matlab/Simulink Based SiC MOSFET Model for Power Converter Applications [J].

Kampitsis, Georgios ;

Antivachis, Michail ;

Kokosis, Sotirios ;

Papathanassiou, Stavros ;

Manias, Stefanos .

2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015), 2015, :1058-1064

[25] Temperature Change Induced Degradation of SiC MOSFET Devices [J].

Sarkany, Zoltan ;

He, Weikun ;

Rencz, Marta .

2016 15TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM), 2016, :1572-1579

[26] Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures [J].

Gu, Zhaoyuan ;

Yang, Mingchao ;

Yang, Yi ;

Liu, Weihua ;

Han, Chuanyu ;

Li, Xin ;

Geng, Li ;

Hao, Yue .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (11) :6921-6926

[27] Gate Oxide Degradation of SiC MOSFET in Switching Conditions [J].

Ouaida, Remy ;

Berthou, Maxime ;

Leon, Javier ;

Perpina, Xavier ;

Oge, Sebastien ;

Brosselard, Pierre ;

Joubert, Charles .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (12) :1284-1286

[28] Micromachined, SiC fiber optic pressure sensors for high-temperature aerospace applications [J].

Pulliam, W ;

Russler, P ;

Mlcak, R ;

Murphy, K ;

Kozikowski, C .

INDUSTRIAL SENSING SYSTEMS, 2000, 4202 :21-30

[29] Design, fabrication and testing of 3C-SiC sensors for high temperature applications [J].

Pozzi, Michele ;

Harris, Alun J. ;

Burdess, James S. ;

Argyrakis, Petros ;

Lee, Kin K. ;

Cheung, Rebecca ;

Phelps, Gordon J. ;

Wright, Nick G. .

DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, 2008, 6800

[30] High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET [J].

Kobayashi, Yusuke ;

Kyogoku, Shinya ;

Morimoto, Tadao ;

Kumazawa, Teruaki ;

Yamashiro, Yusuke ;

Takei, Manabu ;

Harada, Shinsuke .

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, :31-34

← 1 2 3 4 5 →