Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors

被引：36

作者：

Cerdeira, A. ^{[1
]}

Estrada, M. ^{[1
]}

Iniguez, B. ^{[2
]}

Trevisoli, R. D. ^{[3
]}

Doria, R. T. ^{[3
]}

de Souza, M. ^{[3
]}

Pavanello, M. A. ^{[3
]}

机构：

[1] CINVESTAV IPN, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 07360, DF, Mexico

[2] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, E-43007 Tarragona, Spain

[3] Ctr Univ FEI, Dept Elect Engn, BR-09850901 Sao Bernardo Do Campo, Brazil

来源：

SOLID-STATE ELECTRONICS | 2013年 / 85卷

基金：

巴西圣保罗研究基金会;

关键词：

JLT; Junctionless transistor; Double-Gate Junctionless Transistor model; Accumulation JLT; Depletion JLT; COMPACT MODEL; MOSFETS;

D O I：

10.1016/j.sse.2013.03.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping concentrations of 5 x 10(18) and 1 x 10(19) cm(-3), as well as for layer thicknesses of 10, 15 and 20 nm. The model is physically-based, considering both the depletion and accumulation operating conditions. Most model parameters are related to physical magnitudes, and the extraction procedure for each of them is well established. The model provides an accurate description of the transistor behavior in all operating conditions. Among important advantages with respect to previous models are the inclusion of the effect of the series resistance and the fulfilment of the requirement of being symmetrical with respect to V-d = 0 V. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：59 / 63

页数：5

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