Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane

被引：23
作者：
Pimputkar, S. [1 ]
Kawabata, S. [2 ]
Speck, J. S. [1 ]
Nakamura, S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Solid State Lighting & Energy Ctr, Santa Barbara, CA 93106 USA
[2] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 368卷
基金：
美国国家科学基金会;
关键词：
Growth rate; Surface morphology; Ammonothermal crystal growth; Single crystal growth; Bulk GaN; Nitrides;
D O I：
10.1016/j.jcrysgro.2013.01.022
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaN crystals were grown on hydride vapor phase epitaxy (HVPE) GaN seed crystals with non-polar surface orientations varying between on-axis m-plane and a-plane using the basic ammonothermal method. Three different surface morphology regimes were observed with the surface features including mounds, slate-like morphologies, and pyramidal 'spikes' composed of (0001) and non-polar microfacets. A macroscopic off-orientation of the non-steady-state surface and newly appearing steady-state growth surfaces towards [0001] by approximately 1 degrees was observed with geometric constraints suggesting an off-orientation of the observed {10-10} microfacets towards [000 (1) over bar] by approximately 1 or greater. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：67 / 71
页数：5
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