Fabrication and microstructure of p-type transparent conducting CuS thin film and its application in dye-sensitized solar cell

被引：116

作者：

Yuan, K. D. ^{[1
]}

Wu, J. J. ^{[1
]}

Liu, M. L. ^{[1
]}

Zhang, L. L. ^{[1
]}

Xu, F. F. ^{[1
]}

Chen, L. D. ^{[1
]}

Huang, F. Q. ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2991441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By reducing film thickness to a few nanometers, the narrow-band-gap CuS turns highly transparent. Surface modification by a self- assembled monolayer is the key factor to obtain a thin, dense, and continuous film. The film growth mechanism is identified as "layer-by-layer growth followed by islanding." After annealing, a p-type conductivity of similar to 2 x 10(3) S cm(-1) is achieved at room temperature, and the thinnest conductive film has an average transparency of 92% between 400 and 800 nm. Using p-type CuS films as front contact layers, a dye-sensitized solar cell was fabricated with a significant photoelectric response. (C) 2008 American Institute of Physics.

引用

页数：3

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