Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature

被引：0

作者：

Mizutani, Yuki ^{[1
]}

Kimura, Junichi ^{[2
]}

Takuwa, Itaru ^{[2
]}

Yamada, Tomoaki ^{[2
]}

Funakubo, Hiroshi ^{[2
]}

Uchida, Hiroshi ^{[1
]}

机构：

[1] Sophia Univ, Dept Mat & Life Sci, Chiyoda Ku, Tokyo 1028554, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engn, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTROCERAMICS IN JAPAN XIV | 2011年 / 485卷

关键词：

Thin film; CaBi4Ti4O15; SrBi4Ti4O15; Chemical solution deposition; Crystal orientation; Temperature coefficient of capacitance; FERROELECTRIC PROPERTIES; SINGLE-CRYSTALS; DEPENDENCE;

D O I：

10.4028/www.scientific.net/KEM.485.191

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of MBi4Ti4O15 (M = Ca and Sr) with preferential crystal orientation were fabricated using underneath perovskite layers on various substrates. One-axis BLSD films on (100)LaNiO3/(111)Pt/Ti/(100)Si and epitaxial BLSD films on (100)SrRuO3//(100)SrTiO3 were fabricated by chemical solution deposition (CSD). Dielectric constants of the CaBi4Ti4O15 and SrBi4Ti4O15 films on (100)LaNiO3/(111)Pt/Ti/(100)Si were approximately 250, while those on (100)SrRuO3//(100)SrTiO3 were 220, respectively. The temperature coefficients of capacitance (TCCs) of these films were below 10% in atmospheric temperature range between R.T. and 300 degrees C, which is significantly smaller than those of conventional (Ba,Sr)TiO3-based capacitors.

引用

页码：191 / +

页数：2

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