a-SiNx:H Antireflective And Passivation Layer Deposited By Atmospheric Pressure Plasma

被引：17
作者：
Vallade, J. [1 ,2 ]
Pouliquen, S. [3 ]
Lecouvreur, P. [1 ]
Bazinette, R. [1 ]
Hernandez, E. [1 ]
Quoizola, S. [1 ,4 ]
Massines, F. [1 ]
机构：
[1] Tecnosud, UPR 8521, Lab PROc Mat & Energie Solaire, F-66100 Perpignan, France
[2] Agence Ienvironnement & Maitrise IEnergie, F-90406 Angers, France
[3] Ctr Rech Claude Delorme, Air Iiquide, F-78354 Jouy En Josas, France
[4] Univ Perpignan, F-66860 Perpignan, France
来源：
PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷
关键词：
Antireflective Coating; passivation; Silicon Nitride; Atmospheric Pressure PECVD; refractive index; extinction coefficient; on-line coating; Dielectric Barrier Discharges;
D O I：
10.1016/j.egypro.2012.07.078
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
An Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is under development to deposit hydrogenated amorphous silicon nitride (a-SiNx:H) on silicon solar cells. Due to its inline integration capability, it is an alternative to the standard industrial Low Pressure Plasma Enhanced Chemical Vapor Deposition (LP-PECVD) process, allowing higher production throughput. The present work shows the correlation between the treatment head configuration and the antireflective properties of the thin film. The analysis of deposited silicon nitride chemistry and structure explains why the thin film has at first a too high extinction coefficient and gives solutions to solve the problem by improving the gas flow control and the plasma length. Silicon passivation is also discussed. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.
引用
收藏
页码：365 / 371
页数：7
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