a-SiNx:H Antireflective And Passivation Layer Deposited By Atmospheric Pressure Plasma

被引：17
|
作者：
Vallade, J. [1 ,2 ]
Pouliquen, S. [3 ]
Lecouvreur, P. [1 ]
Bazinette, R. [1 ]
Hernandez, E. [1 ]
Quoizola, S. [1 ,4 ]
Massines, F. [1 ]
机构：
[1] Tecnosud, UPR 8521, Lab PROc Mat & Energie Solaire, F-66100 Perpignan, France
[2] Agence Ienvironnement & Maitrise IEnergie, F-90406 Angers, France
[3] Ctr Rech Claude Delorme, Air Iiquide, F-78354 Jouy En Josas, France
[4] Univ Perpignan, F-66860 Perpignan, France
来源：
PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷
关键词：
Antireflective Coating; passivation; Silicon Nitride; Atmospheric Pressure PECVD; refractive index; extinction coefficient; on-line coating; Dielectric Barrier Discharges;
D O I：
10.1016/j.egypro.2012.07.078
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
An Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is under development to deposit hydrogenated amorphous silicon nitride (a-SiNx:H) on silicon solar cells. Due to its inline integration capability, it is an alternative to the standard industrial Low Pressure Plasma Enhanced Chemical Vapor Deposition (LP-PECVD) process, allowing higher production throughput. The present work shows the correlation between the treatment head configuration and the antireflective properties of the thin film. The analysis of deposited silicon nitride chemistry and structure explains why the thin film has at first a too high extinction coefficient and gives solutions to solve the problem by improving the gas flow control and the plasma length. Silicon passivation is also discussed. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.
引用
收藏
页码：365 / 371
页数：7
相关论文
共 50 条
  • [1] Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks
    Dingemans, G.
    Mandoc, M. M.
    Bordihn, S.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    APPLIED PHYSICS LETTERS, 2011, 98 (22)
  • [2] Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells
    Lelievre, Jean-Francois
    Kafle, Bishal
    Saint-Cast, Pierre
    Brunet, Paul
    Magnan, Romain
    Hernandez, Emmanuel
    Pouliquen, Sylvain
    Massines, Francoise
    PROGRESS IN PHOTOVOLTAICS, 2019, 27 (11): : 1007 - 1019
  • [3] Influence of the discharge mode on the optical and passivation properties of SiNx:H deposited by PECVD at atmospheric pressure
    Bazinette, Remy
    Lelievre, Jean-Francois
    Gaudy, Laura
    Massines, Francoise
    PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016), 2016, 92 : 309 - 316
  • [4] Thermal stability of a-SiNx:H films deposited by plasma electron cyclotron resonance
    Martínez, FL
    del Prado, A
    Bravo, D
    López, F
    Mártil, I
    González-Díaz, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 1280 - 1284
  • [5] Interface properties of a-SiNx:H/Si to improve surface passivation
    Lamers, Machteld W. P. E.
    Butler, Keith T.
    Harding, John H.
    Weeber, Arthur
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 106 : 17 - 21
  • [6] Structural film characteristics related to the passivation properties of high-rate (>0.5 nm/s) plasma deposited a-SiNx:H
    Hong, J
    Kessels, WMM
    Soppe, WJ
    Rieffe, HC
    Weeber, AW
    van de Sanden, MCM
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1158 - 1161
  • [7] Composition Limited Hydrogen Effusion Rate of a-SiNx:H Passivation Stack
    Jafari, Sahar
    Hirsch, Jens
    Lausch, Dominik
    John, Marco
    Bernhard, Norbert
    Meyer, Sylke
    9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019), 2019, 2147
  • [8] Properties of a-SiNx:H films deposited at room temperature by the electron cyclotron resonance plasma method
    Garcia, S
    Martin, JM
    Fernandez, M
    Martil, I
    GonzalezDiaz, G
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, 73 (03): : 487 - 502
  • [9] Comprehensive investigation of silicon surface passivation by a-Si:H and a-SiNx:H films
    Laades, Abdelazize
    Blech, Michael
    Baehr, Mario
    Lauer, Kevin
    Lawerenz, Alexander
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03):
  • [10] Properties of plasma-enhanced chemical-vapor-deposited a-SiNx:H by various dilution gases
    Hsieh, S.W.
    Chang, C.Y.
    Lee, Y.S.
    Lin, C.W.
    Hsu, S.C.
    Journal of Applied Physics, 1994, 76 (06):
12345