Fabrication and optical characterization of GaN-based nanopillar light emitting diodes

被引：2

作者：

Zhu Ji-Hong ^{[1
]}

Zhang Shu-Ming ^{[1
]}

Sun Xian ^{[1
]}

Zhao De-Gang ^{[1
]}

Zhu Jian-Jun ^{[1
]}

Liu Zong-Shun ^{[1
]}

Jiang De-Sheng ^{[1
]}

Duan Li-Hong ^{[1
]}

Wang Hai ^{[1
]}

Shi Yong-Sheng ^{[1
]}

Liu Su-Ying ^{[1
]}

Yang Hui ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.

引用

页码：3485 / 3488

页数：4

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