High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy

被引：69

作者：

Langer, R

Barski, A

Simon, J

Pelekanos, NT

Konovalov, O

André, R

Dang, LS

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[2] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期

关键词：

D O I：

10.1063/1.123197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly-reflective GaN/GaAlN quarter-wave Bragg mirrors, designed to be centered at blue/green wavelengths, have been grown by molecular beam epitaxy. The reflectivity for a mirror centered at 473 nm was as high as 93% and the bandwidth reached 22 nm. Detailed x-ray diffraction measurements allowed us to characterize the structural parameters of the Bragg mirrors. We show that, in spite of substantial strain relaxation occurring in our samples, high reflectivity is still possible. In addition, we show that growth interruption at the heterointerfaces is crucial for achieving high reflectivities. (c) 1999 American Institute of Physics. [S0003-6951(99)03824-3].

引用

收藏

页码：3610 / 3612

页数：3

相关论文

共 50 条

[41] Optimisation of the blue emission from As-doped GaN films grown by molecular beam epitaxy [J].

Foxon, CT ;

Novikov, SV ;

Li, T ;

Campion, RP ;

Winser, AJ ;

Harrison, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (01) :39-43

[42] Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy [J].

Adolph, David ;

Zamani, Reza R. ;

Dick, Kimberly A. ;

Ive, Tommy .

APL MATERIALS, 2016, 4 (08)

[43] Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN [J].

Hansen, PJ ;

Vaithyanathan, V ;

Wu, Y ;

Mates, T ;

Heikman, S ;

Mishra, UK ;

York, RA ;

Schlom, DG ;

Speck, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (02) :499-506

[44] Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy [J].

Kim, H ;

Andersson, TG ;

Chauveau, JM ;

Trampert, A .

SOLID-STATE ELECTRONICS, 2003, 47 (03) :539-542

[45] Photoluminescence of GaN grown by molecular beam epitaxy on freestanding GaN template [J].

Reshchikov, MA ;

Yun, F ;

Huang, D ;

He, L ;

Morkoc, H ;

Park, SS ;

Lee, KY .

MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 :27-32

[46] CDHGTE BRAGG REFLECTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BLEUSE, J ;

MAGNEA, N ;

JOUNEAU, PH ;

MARIETTE, H .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :375-378

[47] Growth and characterization of high-quality 10-period AlGaN/GaN Bragg reflectors grown by molecular beam epitaxy [J].

Fernández, S ;

Naranjo, FB ;

Calle, F ;

Calleja, E ;

Trampert, A ;

Ploog, KH .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3) :31-34

[48] High reflectance III-nitride Bragg reflectors grown by molecular beam epitaxy [J].

Ng, HM ;

Moustakas, TD .

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5

[49] HIGH REFLECTIVITY 1.55-MU-M INP/INGAASP BRAGG MIRROR GROWN BY CHEMICAL BEAM EPITAXY [J].

CHOA, FS ;

TAI, K ;

TSANG, WT ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1991, 59 (22) :2820-2822

[50] Molecular beam epitaxy of AlGaAsSb system for 1.55 mu m Bragg mirrors [J].

Harmand, JC ;

Kohl, A ;

Juhel, H ;

LeRoux, G .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :372-376

← 1 2 3 4 5 →