Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory

被引：38

作者：

Chen, Po-Hsun ^{[1
]}

Su, Yu-Ting ^{[2
]}

Chang, Fu-Chen ^{[3
]}

机构：

[1] Chinese Naval Acad, Dept Appl Sci, Kaohsiung 813, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 03期

关键词：

HfO2; insulator; indium-tin-oxide (ITO); oxygen ion reservoir; resistive random access memory (RRAM); PLASMA TREATMENT;

D O I：

10.1109/TED.2019.2895079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the issues of oxygen accumulation and variation in the high-resistance state of HfO2-based resistive random access memory (RRAM), with improvement attained by inserting a thin oxygen-vacancy-rich layer of indium-tin-oxide (ITO) film. By acting as the oxygen ion reservoir, this ITO thin film on the TiN electrode can further stabilize resistance switching (RS) characteristics. In terms of reliability, ac endurance, and retention tests confirm stable RS characteristics for the Pt/HfO2/ITO/TiN device. Finally, a conducting model was proposed to explain the influence of the ITO thin layer and clarify the physical mechanism of electrical improvements.

引用

页码：1276 / 1280

页数：5

共 31 条

[1] Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Akinaga, Hiroyuki
Shima, Hisashi
[J]. PROCEEDINGS OF THE IEEE, 2010, 98 (12) : 2237 - 2251
[2] Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
Ambrogio, Stefano
Balatti, Simone
Cubeta, Antonio
Calderoni, Alessandro
Ramaswamy, Nirmal
Ielmini, Daniele
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2912 - 2919
[3] Complementary Switching in 3D Resistive Memory Array
Banerjee, Writam
Xu, Xiaoxin
Lv, Hangbing
Liu, Qi
Long, Shibing
Liu, Ming
[J]. ADVANCED ELECTRONIC MATERIALS, 2017, 3 (12):
[4] Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory
Banerjee, Writam
Liu, Qi
Long, Shibing
Lv, Hangbing
Liu, Ming
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (30)
[5] Resistance random access memory
Chang, Ting-Chang
Chang, Kuan-Chang
Tsai, Tsung-Ming
Chu, Tian-Jian
Sze, Simon M.
[J]. MATERIALS TODAY, 2016, 19 (05) : 254 - 264
[6] Developments in nanocrystal memory
Chang, Ting-Chang
Jian, Fu-Yen
Chen, Shih-Cheng
Tsai, Yu-Ting
[J]. MATERIALS TODAY, 2011, 14 (12) : 608 - 615
[7] Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions
Chen, An
[J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (02) : 138 - 140
[8] Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
Chen, Po-Hsun
Chang, Ting-Chang
Chang, Kuan-Chang
Tsai, Tsung-Ming
Pan, Chih-Hung
Chen, Min-Chen
Su, Yu-Ting
Lin, Chih-Yang
Tseng, Yi-Ting
Huang, Hui-Chun
Wu, Huaqiang
Deng, Ning
Qian, He
Sze, Simon M.
[J]. ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (03) : 3149 - 3155
[9] Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory
Chen, Po-Hsun
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Pan, Chih-Hung
Su, Yu-Ting
Wu, Cheng-Hsien
Su, Wan-Ching
Yang, Chih-Cheng
Chen, Min-Chen
Tu, Chun-Hao
Chen, Kai-Huang
Lo, Ikai
Zheng, Jin-Cheng
Sze, Simon M.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (11) : 4288 - 4294
[10] Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory
Chen, Po-Hsun
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Pan, Chih-Hung
Lin, Chih-Yang
Jin, Fu-Yuan
Chen, Min-Chen
Huang, Hui-Chun
Wang, Ming-Hui
Lo, Ikai
Zheng, Jin-Cheng
Sze, Simon M.
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) : 584 - 587

← 1 2 3 4 →