Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3

被引：81

作者：

Matsuo, Sadashige ^{[1
]}

Koyama, Tomohiro ^{[1
]}

Shimamura, Kazutoshi ^{[1
]}

Arakawa, Tomonori ^{[1
]}

Nishihara, Yoshitaka ^{[1
]}

Chiba, Daichi ^{[1
]}

Kobayashi, Kensuke ^{[1
]}

Ono, Teruo ^{[1
]}

Chang, Cui-Zu ^{[2
]}

He, Ke ^{[2
]}

Ma, Xu-Cun ^{[2
]}

Xue, Qi-Kun ^{[2
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 07期

关键词：

TOPOLOGICAL INSULATOR BI2SE3; SPIN-ORBIT INTERACTION; SINGLE DIRAC CONE; MAGNETORESISTANCE;

D O I：

10.1103/PhysRevB.85.075440

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

引用

页数：6

共 41 条

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