IGZO-decorated ZnO thin films and their application for gas sensing

被引：5

作者：

Eadi, Sunil Babu ^{[1
]}

Yan, Han ^{[1
]}

Kumar, P. Senthil ^{[2
,3
,4
]}

Rathinam, Yuvakkumar ^{[5
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon, South Korea

[2] Sri Sivasubramaniya Nadar Coll Engn, Dept Chem Engn, Chennai 603110, Tamil Nadu, India

[3] Sri Sivasubramaniya Nadar Coll Engn, Ctr Excellence Water Res CEWAR, Chennai 603110, Tamil Nadu, India

[4] Chandigarh Univ, Dept Biotechnol Engn & Food Technol, Mohali 140413, India

[5] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

来源：

ENVIRONMENTAL RESEARCH | 2022年 / 214卷

基金：

新加坡国家研究基金会;

关键词：

Indium-gallium-zinc oxide; Atomic layer deposition; Nitrogen oxide; Gas sensor; Sensitivity;

D O I：

10.1016/j.envres.2022.113796

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this study, indium-gallium-zinc oxide (IGZO)-decorated ZnO thin films were investigated through the change in IGZO deposition time for the detection of NO2 gas. The atomic layer deposited ZnO on interdigitated Au electrode alumina substrates are decorated with IGZO by controlling the deposition time. The IGZO (ZnO:Ga2O3: In2O3 = 1:1:1 mol. %) polycrystalline target was used for deposition and effect of deposition time was investigated. The sensor responses (R-gas/R-air) of 20.6, 39.3, and 57.1 and 45.2, 102.5, and 243.5 were obtained at 150 degrees C, 200 degrees C, and 250 degrees C and 25-ppm NO2 concentration for ZnO (Z1) and IGZO-decorated ZnO (Z3) films, respectively. The sensor response (R-gas/R-air) increased from similar to 27 to 243.5 by decorating the ZnO film with IGZO for a 60-s sputtering time. The sensor recovery and response times of the IGZO-decorated ZnO/ZnO sensor increased, and the sensor selectivity to different gases was also evaluated.

引用

页数：7

共 29 条

[1] Pulsed laser deposition of ZnO thin films decorated with Au and Pd nanoparticles with enhanced acetone sensing performance [J].