Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

被引：57

作者：

Kim, Kyu-Sang ^{[1
]}

Han, Dong-Pyo ^{[2
]}

Kim, Hyun-Sung ^{[2
]}

Shim, Jong-In ^{[2
]}

机构：

[1] Sangji Univ, Dept Appl Phys & Elect, Wonju 220702, Gangwon Do, South Korea

[2] Hanyang Univ, Dept Elect & Commun Engn, Ansan 426791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Gallium alloys - III-V semiconductors - Semiconductor alloys - Quantum efficiency - Indium alloys;

D O I：

10.1063/1.4867647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two kinds of green InGaN light emitting diodes (LEDs) have been investigated in order to understand the different slopes in logarithmic light output power-current (L-I) curves. Through the analysis of the carrier rate equation and by considering the carrier density-dependent the injection efficiency into quantum wells, the slopes of the logarithmic L-I curves can be more rigorously understood. The low current level, two as the tunneling current is initially dominant. The high current level beyond the peak of the external quantum efficiency (EQE) diminishes below one as the carrier overflow becomes dominant. In addition, the normalized carrier injection efficiency can be obtained by analyzing the slopes of the logarithmic L-I curves. The carrier injection efficiency decreases after the EQE peak of the InGaN LEDs, determined from the analysis of the slopes of the logarithmic L-I curves. (C) 2014 AIP Publishing LLC.

引用

页数：4

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