Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

被引：19
作者：
Bose, Arijit [1 ]
Biswas, Debaleen [1 ]
Hishiki, Shigeomi [2 ]
Ouchi, Sumito [2 ]
Kitahara, Koichi [2 ]
Kawamura, Keisuke [2 ]
Wakejima, Akio [1 ]
机构：
[1] Nagoya Inst Technol, Dept Elect & Mech Engn, Nagoya, Aichi 4668555, Japan
[2] Air Water Inc, SIC Div, Nagano 3998204, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 10期
关键词：
Thick nitride layer; GaN-on-Cz-Si; 3C-SiC intermediate layer; open pad; f(T); C-pg; ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN HEMTS; SILICON; PERFORMANCE; EPITAXY; ENHANCEMENT;
D O I：
10.1109/LED.2020.3019482
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the effect of a thick nitride layer on the high-frequency performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by metal oxide chemical vapor deposition (MOCVD) on a 6-inch Czochralski (Cz)-Si substrate. The thick nitride layer was grown via a 3C-SiC intermediate layer. A significantly low parasitic pad capacitance and a comparable cutoff frequency of 4.5 GHz for 2-mu m gate length devices were achieved alongwith excellent electrontransport characteristics, such as a mobility of similar to 2200 cm(2)/V-s and a drain current density of 520 mA/mm. The extracted small-signal equivalent circuit parameters also verified the accuracy of the measured cutoff frequency and parasitic capacitances.
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收藏
页码：1480 / 1483
页数：4
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