A silicon metal-oxide-semiconductor electron spin-orbit qubit

被引：91

作者：

Jock, Ryan M. ^{[1
]}

Jacobson, N. Tobias ^{[2
]}

Harvey-Collard, Patrick ^{[1
,3
,4
]}

Mounce, Andrew M. ^{[1
]}

Srinivasa, Vanita ^{[2
]}

Ward, Dan R. ^{[1
]}

Anderson, John ^{[1
]}

Manginell, Ron ^{[1
]}

Wendt, Joel R. ^{[1
]}

Rudolph, Martin ^{[1
]}

Pluym, Tammy ^{[1
]}

Gamble, John King ^{[2
]}

Baczewski, Andrew D. ^{[2
]}

Witzel, Wayne M. ^{[2
]}

Carroll, Malcolm S. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Sandia Natl Labs, Ctr Res Comp, Albuquerque, NM 87185 USA

[3] Univ Sherbrooke, Dept Phys, 2500 Boul Univ, Sherbrooke, PQ J1K 2R1, Canada

[4] Univ Sherbrooke, Inst Quant, 2500 Boul Univ, Sherbrooke, PQ J1K 2R1, Canada

来源：

NATURE COMMUNICATIONS | 2018年 / 9卷

关键词：

QUANTUM; GATE;

D O I：

10.1038/s41467-018-04200-0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin-orbit (SO) effects. Here we advantageously use interface-SO coupling for a critical control axis in a double-quantum-dot singlet-triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface-SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T-2m*, of 1.6 mu s is consistent with 99.95% Si-28 enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 mu eV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.

引用

页数：8

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[1] Effective one-band approach for the spin splittings in quantum wells [J].