Effects of varying curvature and width on the electronic states of GaAs quantum rings

被引:3
作者
Bruno-Alfonso, A [1 ]
de Oliveira, TA [1 ]
机构
[1] Univ Estadual Paulista, Dept Matemat, Fac Ciencias, BR-17033360 Bauru, SP, Brazil
关键词
electronic states; GaAs elliptical quantum rings; effective-mass approximation;
D O I
10.1590/S0103-97332006000300054
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Stationary states of an electron in thin GaAs elliptical quantum rings are calculated within the effective-mass approximation. The width of the ring varies smoothly along the centerline, which is an ellipse. The solutions of the Schrodinger equation with Dirichlet boundary conditions are approximated by a product of longitudinal and transversal wave functions. The ground-state probability density shows peaks: (i) where the curvature is larger in a constant-with ring, and (ii) in thicker parts of a circular ring. For rings of typical dimensions, it is shown that the effects of a varying width may be stronger than those of the varying curvature. Also, a width profile which compensates the main localization effects of the varying curvature is obtained.
引用
收藏
页码:434 / 437
页数:4
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