AlGaAs/GaAs laser diode bars (λ=808 nm) with improved thermal stability

被引：13

作者：

Marmalyuk, A. A. ^{[1
]}

Ladugin, M. A. ^{[1
]}

Andreev, A. Yu ^{[1
]}

Telegin, K. Yu ^{[1
]}

Yarotskaya, I. V. ^{[1
]}

Meshkov, A. S. ^{[1
]}

Konyaev, V. P. ^{[1
]}

Sapozhnikov, S. M. ^{[1
]}

Lebedeva, E. I. ^{[1
]}

Simakov, V. A. ^{[1
]}

机构：

[1] OJSC MF Stelmakh Polyus Res Inst, Moscow 117342, Russia

来源：

QUANTUM ELECTRONICS | 2013年 / 43卷 / 10期

关键词：

laser diode bar; two-dimensional laser diode array; metal-organic vapour phase epitaxy; quantum well; QUANTUM-WELL LASERS;

D O I：

10.1070/QE2013v043n10ABEH015159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two series of AlGaAs/GaAs laser heterostructures have been grown by metal-organic vapour phase epitaxy, and 808-nm laser diode bars fabricated from the heterostructures have been investigated. The heterostructures differed in waveguide thickness and quantum well depth. It is shown that increasing the barrier height for charge carriers in the active region has an advantageous effect on the output parameters of the laser sources in the case of the heterostructures with a narrow symmetric waveguide: the slope of their power - current characteristics increased from 0.9 to 1.05 W A(-1). Thus, the configuration with a narrow waveguide and deep quantum well is better suited for high-power laser diode bars under hindered heat removal conditions.

引用

页码：895 / 897

页数：3

共 50 条

[21] Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode
Chan, Trevor
Son, Sung Hun
Kim, Kyoung Chan
Kim, Tae Geun
JOURNAL OF THE OPTICAL SOCIETY OF KOREA, 2011, 15 (02) : 124 - 127
[22] Highly reliable 40W-cw-InGaAlAs/GaAs-808 nm laser bars
Hanke, C
Korte, L
Acklin, B
Luft, J
Grötsch, S
Herrmann, G
Spika, Z
Marciano, M
De Odorico, B
Wilhelmi, J
IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 64 - 70
[23] Reliability of 808 nm QCW laser diode arrays
Gafurov, E. M.
Smirnov, E. V.
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2022, 15 (03): : 167 - 171
[24] Thermal effects of λ = 808 nm GaAlAs diode laser irradiation on different titanium surfaces
Marco Giannelli
Massimo Lasagni
Daniele Bani
Lasers in Medical Science, 2015, 30 : 2341 - 2352
[25] Thermal effects of λ=808 nm GaAlAs diode laser irradiation on different titanium surfaces
Giannelli, Marco
Lasagni, Massimo
Bani, Daniele
LASERS IN MEDICAL SCIENCE, 2015, 30 (09) : 2341 - 2352
[26] High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size
Emanuel, MA
Carlson, NW
Skidmore, JA
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) : 1291 - 1293
[27] Thermal effects analysis of Nd:CNGG 935 nm laser pumped by 885 nm and 808 nm diode lasers
Shi, Yuxian
Lu, Tielin
Feng, Baohua
Zhang, Huaijin
Yu, Haohai
Wang, Jiyang
Zhongguo Jiguang/Chinese Journal of Lasers, 2012, 39 (11):
[28] 784.9 nm and 808 nm Laser Diode Pumped Tm/Ho Bonded Laser
Wang Juan
Huang Haizhou
Huang Jianhong
Chen Jinming
Deng Jing
Weng Wen
Dai Shutao
Wu Hongchun
Lin Wenxiong
CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2018, 45 (10):
[29] 808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures
Marmalyuk, AA
Padalitsa, AA
Nikitin, DB
Bulaev, PV
Sukharev, A
Zalevsky, ID
CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1, 2003, : 230 - 230
[30] Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70 %
Ladugin, M. A.
Marmalyuk, A. A.
Padalitsa, A. A.
Bagaev, T. A.
Andreev, A. Yu.
Telegin, K. Yu.
Lobintsov, A. V.
Davydova, E. I.
Sapozhnikov, S. M.
Danilov, A. I.
Podkopaev, A. V.
Ivanova, E. B.
Simakov, V. A.
QUANTUM ELECTRONICS, 2017, 47 (04) : 291 - 293

← 1 2 3 4 5 →