Low-loss porous silicon substrates for microwave and millimeter applications

被引：0
|
作者：
Guo, F. [1 ]
Zhang, L. [1 ]
Sun, Z. [1 ]
Zhu, Z. [1 ]
Chu, J. [1 ]
机构：
[1] East China Normal Univ, Sch Informat Sci & Technol, Key Lab Minist Educ Polarizat Mat & Devices, Shanghai 200241, Peoples R China
来源：
2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2008年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper propose the utilization of a photolithographic process to elevate the metal lines position that relative to the wafer plane, in order to take advantage from the signal propagation practically on-the-air, gained an almost ideal TEM mode of propagation in CPW structure. S-parameter and coupling degree of CPW with Porous Si (PS), SOI and high resistivity Silicon (HRS), SOI substrates are compared.
引用
收藏
页码：498 / +
页数：2
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