Transient and frequency analysis of PIN avalanche photodetector using circuit model

被引：3

作者：

Jalali, M ^{[1
]}

Soroosh, M ^{[1
]}

Farshi, MKM ^{[1
]}

Nabavi, AR ^{[1
]}

机构：

[1] TMU, Opt Tech Lab, Tehran, Iran

来源：

LFNM 2005: 7TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORKS MODELING | 2005年

关键词：

photodetector; circuit model; transient response; frequency response;

D O I：

10.1109/LFNM.2005.1553250

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper tries to characterize the PIN and avalanche photodiode (APD) in time and frequency domain using the circuit simulation in Spice. For this reason a circuit model of PIN avalanche diodes based on carrier rate equations has been considered. This model is able to pretend dc, ac, and transient response of diode. We contemplate the effects of variation in bias voltage and optical power on frequency and transient response.

引用

页码：294 / 296

页数：3