GaN/AlGaN MODFET with 80 GHz f(max) and >100V gate-drain breakdown voltage

被引：30

作者：

Nguyen, NX

Keller, BP

Keller, S

Wu, YF

Le, M

Nguyen, C

Denbaars, SP

Mishra, UK

Grider, D

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT MAT SCI,SANTA BARBARA,CA 93106

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 04期

关键词：

MODFET; semiconductor growth;

D O I：

10.1049/el:19970174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the characteristics of 0.25 mu m gate-length GaN/AlGaN modulation doped field effect transistors grown by MOCVD on sapphire. A record combination of high breakdown voltage (>100V) and high frequency performance (f(T) = 27GHz, f(max) = 80GHz) was achieved, which demonstrates the excellent potential of these devices for microwave power applications.

引用

页码：334 / 335

页数：2

共 6 条

[1] Ohmic contacts and Schottky barriers to n-GaN [J].

Fan, Z ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Suzue, K ;

Morkoc, H ;

Duxstad, K ;

Haller, EE .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) :1703-1708

[2]

KHAN AM, 1996, ELECTRON LETT, V32, P357

[3]

KHAN MA, 1995, APPL PHYS LETT, V67, P1429

[4]

TREW RJ, 1996, GAAS IC S ORL

[5] Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Kapolnek, D ;

Kozodoy, P ;

Denbaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1438-1440

[6] Wide bandgap semiconductor materials and devices [J].

Yoder, MN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) :1633-1636

← 1 →