Hydrogen gas sensing properties of platinum decorated silicon carbide (Pt/SiC) Nanoballs

被引:20
作者
Singh, Narendra [1 ,2 ]
Kumar, Arvind [3 ]
Kaur, Davinder [1 ,2 ]
机构
[1] Indian Inst Technol Roorkee, Dept Phys, Funct Nanomat Res Lab, Roorkee 247667, Uttar Pradesh, India
[2] Indian Inst Technol Roorkee, Ctr Nanotechnol, Roorkee 247667, Uttar Pradesh, India
[3] Indian Inst Technol Roorkee, Inst Instrumentat Ctr, Nanosci Lab, Roorkee 247667, Uttar Pradesh, India
关键词
Nanostructure; Porous silicon; Hydrogen; Sensor; Nanoball; THIN-FILMS; SENSOR; NANOCAULIFLOWERS; NANOCRYSTALLINE; PERFORMANCE;
D O I
10.1016/j.snb.2018.01.216
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In the present study, platinum decorated silicon carbide (Pt/SiC) nanoballs (NBs) were directly grown on Ag coated porous Si substrates via DC/RF magnetron sputtering. Porous Si substrates were prepared by the metal-assisted chemical etching process at room temperature. The structural and morphological properties of as-grown SiC nanoballs (NBs) were studied using various techniques such as X-ray diffraction (XRD), Raman spectroscopy and field scanning electron microscopy (FESEM) respectively. Hydrogen gas sensing properties along with the sensing mechanism of Pt/SiC nanoball-based sensor within low detection limit (5-1000 ppm) at the high operating temperature range (30-480 degrees C) were investigated in detail. The sensor exhibits high sensing response (44.48%) with very fast response time (15 s) toward 100 ppm hydrogen gas at 330 degrees C. These above results suggest the feasibility of Pt decorated SiC nanoballs for highly sensitive and selective hydrogen gas sensor at the high operating temperature and harsh environment conditions. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:162 / 170
页数:9
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