HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX

被引：0

作者：

Miura-Mattausch, M. ^{[1
]}

Feldmann, U. ^{[1
]}

Kikuchihara, H. ^{[1
]}

Nakagawa, T. ^{[2
]}

Ichimiya, H. ^{[1
]}

Miyake, M. ^{[1
]}

Iizuka, T. ^{[1
]}

Mattausch, H. J. ^{[1
]}

机构：

[1] Hiroshima Univ, Adv Scienece Matter, Kagamiyama 1-3-1, Higashihiroshima 7398530, Japan

[2] Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL | 2012年

关键词：

compact model; surface-potential model; Poisson equation; thin body and thin BOX SOI-SMOFET; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The SOI-MOSFET has three surfaces, for which electrostatic potential values are very much dependent on applied bias conditions. HiSIM-SOTB has been developed by solving the Poisson equation iteratively to calculate the surface potentails accurately for any bias conditions. It has been verified that the model can indeed reflect structural size variations over a very large range. The model includes all possible charges induced at the three oxide surfaces in the SOI structure. The approach with simultaneous inclusion of the three surface charges can easily make the circuit simulation unstable. To overcome such stability problems we have developed a sophisticated method for reliably solving the Poisson equation. We address the development of solutions to the outlined challenges in our report.

引用

页码：792 / 795

页数：4

共 8 条

[1] Complete surface-potential-based fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model for circuit simulation [J].