Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs

被引：11

作者：

Nakao, Y. ^{[1
]}

Watanabe, S. ^{[1
]}

Miura, N. ^{[1
]}

Imaizumi, M. ^{[1
]}

Oomori, T. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

high voltage; power MOSFET; short circuit;

D O I：

10.4028/www.scientific.net/MSF.600-603.1123

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The shout-circuit ruggedness of prototype 1.2kV SiC MOSFETs has been investigated. The short-circuit measurements were carried out at 25 degrees C and 125 degrees C with a dc bus voltage of 800 V and an on/off state gate voltage of +20/-10 V. The small difference in t(fail) between 25 degrees C and 125 degrees C indicates that the destructive breakdown occurs at temperatures much higher than 125 degrees C. The temperature at destructive breakdown estimated from the Wunsch-Bell formula is about 1400 degrees C. At such high temperatures, intrinsic carriers are increased markedly and generated heat leads to the destructive breakdown. t(fail) of all the SiC-MOSFETs studied is longer than 10 mu s, meaning that the short-circuit ruggedness satisfies system requirements. These results show that the SiC-MOSFETs are promising for power electronics applications.

引用

页码：1123 / 1126

页数：4