Application of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials

被引:21
作者
Dropka, Natasha [1 ]
Holena, Martin [2 ,3 ]
机构
[1] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany
[2] Leibniz Inst Catalysis, Albert Einstein Str 29A, D-18069 Rostock, Germany
[3] Inst Comp Sci, Vodarenskou Vezi 2, Prague 18207, Czech Republic
关键词
artificial neural networks; crystal growth; semiconductors; oxides; OPTIMIZATION; IDENTIFICATION; PREDICTION;
D O I
10.3390/cryst10080663
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this review, we summarize the results concerning the application of artificial neural networks (ANNs) in the crystal growth of electronic and opto-electronic materials. The main reason for using ANNs is to detect the patterns and relationships in non-linear static and dynamic data sets which are common in crystal growth processes, all in a real time. The fast forecasting is particularly important for the process control, since common numerical simulations are slow and in situ measurements of key process parameters are not feasible. This important machine learning approach thus makes it possible to determine optimized parameters for high-quality up-scaled crystals in real time.
引用
收藏
页码:1 / 17
页数:17
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