Formation and ordering of epitaxial quantum dots

被引:48
作者
Atkinson, Paola [1 ]
Schmidt, Oliver G. [2 ]
Bremner, Stephen P. [3 ]
Ritchie, David A. [3 ]
机构
[1] Max Planck Inst Solid State Res, D-70563 Stuttgart, Germany
[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会;
关键词
Quantum dot; Molecular beam epitaxy;
D O I
10.1016/j.crhy.2008.10.014
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices, However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P Atkinson et al., C R. Physique 9 (2008). (C) 2008 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:788 / 803
页数:16
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