Quantum Anomalous Hall Effect with Higher Plateaus

被引:162
作者
Wang, Jing [1 ]
Lian, Biao [1 ]
Zhang, Haijun [1 ]
Xu, Yong [1 ]
Zhang, Shou-Cheng [1 ]
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
关键词
TOPOLOGICAL PHASE-TRANSITION; INSULATORS; CONDUCTANCE; TEMPERATURE; BI2SE3;
D O I
10.1103/PhysRevLett.111.136801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The quantum anomalous Hall (QAH) effect in magnetic topological insulators is driven by the combination of spontaneous magnetic moments and spin-orbit coupling. Its recent experimental discovery raises the question if higher plateaus can also be realized. Here, we present a general theory for a QAH effect with higher Chern numbers and show by first-principles calculations that a thin film magnetic topological insulator of Cr-doped Bi-2(Se, Te)(3) is a candidate for the C = 2 QAH insulator. Remarkably, whereas a higher magnetic field leads to lower Hall conductance plateaus in the integer quantum Hall effect, a higher magnetic moment leads to higher Hall conductance plateaus in the QAH effect.
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页数:5
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